型号:

FDB2572

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET N-CH 150V 29A TO-263AB
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FDB2572 PDF
产品培训模块 High Voltage Switches for Power Processing
标准包装 1
系列 PowerTrench®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 150V
电流 - 连续漏极(Id) @ 25° C 29A
开态Rds(最大)@ Id, Vgs @ 25° C 54 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 34nC @ 10V
输入电容 (Ciss) @ Vds 1770pF @ 25V
功率 - 最大 135W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 TO-263AB
包装 标准包装
其它名称 FDB2572DKR
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